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SUMMARY:WW-Colloquium: Prof. Dr. Stefan Zaefferer\, Bringing the TEM t
 o SEM: An introduction to the basics of controlled electron channellin
 g contrast imaging (cECCI) and its application to the study of extende
 d defects in metals and alloys
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 00000010000000F58C5E01A6A5B945A899ED056F162E3F
DESCRIPTION:Prof. Dr. Stefan Zaefferer Max-Planck-Institut für Nachha
 ltige Materialien GmbH Düsseldorf Bringing the TEM to SEM: An introdu
 ction to the basics of controlled electron channelling contrast imagin
 g (cECCI) and its application to the study of extended defects in meta
 ls and alloys Electron channelling contrast imaging (ECCI) is an SEM b
 ased technique for observation of extended crystal lattice defects lik
 e dislocations and stacking faults. It exploits the dependence of the 
 backscatter electron intensity on crystal orientation and atomic order
 . For ECCI a crystalline sample is observed with the backscattered ele
 ctron signal. The basic principle of contrast formation is that electr
 ons channel into a crystal lattice when the incident beam enters the l
 attice along the Bragg angle of a set of crystal planes. In this case\
 , very few electrons are backscattered and the observed crystal appear
 s dark. Every defect that disturbs the order of the lattice planes\, i
 n contrast\, leads to backscattering and is visible in the ECC image a
 s bright features in a dark grain. Dislocations\, for example\, appear
  as bright lines\, stacking faults as bright areas with similar contra
 st features as those known from transmission electron microscopy (TEM)
 . Important for good imaging is a small beam convergence for good cont
 rast\, a small spot size for good resolution and a high beam current f
 or low-noise images. Additionally\, a sample holder with eucentric til
 t and rotation capabilities allows to tilt the sample into well-contro
 lled channelling conditions. The technique can be used very similar to
  TEM\, however with the serious advantage that a bulk sample is observ
 ed and not a thin foil. This enables observation of much larger sample
 s\, simplifies sample preparation\, and it facilitates in-situ experim
 ents like deformation\, heating\, or gas reaction observations. In the
  presentation the basic principles of the technique are explained and 
 illustrated. Examples will cover studies on hydrogen-e
DTSTART:20260428T140000Z
DTEND:20260428T160000Z
LOCATION:H14 / Zoom
DTSTAMP:20260427T234423Z
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