BEGIN:VCALENDAR METHOD:PUBLISH PRODID:www-ww-tf-fau-eu//Events//EN VERSION:2.0 BEGIN:VEVENT SUMMARY:Invited Lecture of IRTG 2495: Defects in Nitrides\, Fundamenta ls of Texturing\, and Optical Sintering UID:040000008200E00074C5B7101A82E00800000000B0925C7D3B0ADD010000000000 000000100000008A0616ABB6023F4D871EE762C88806CE DESCRIPTION:Prof. Geoff Brennecka Colorado School of Mines\, USA Defec ts in Nitrides\, Fundamentals of Texturing\, and Optical Sintering Thi s presentation will provide a brief overview of the research in Prof. Geoff Brennecka’\;s group at Colorado School of Mines\, including work on textured ceramics\, optical sintering\, and sputtered nitride ferroelectrics. Templated grain growth (TGG) is a clever method for i mparting crystallographic texture in polycrystalline ceramics\, but si multaneous densification and grain growth in inherently heterogeneous (and often bimodal) microstructures make reliably achieving full densi fication difficult. As part of an effort to effectively simulate this TGG process across multiple length scales\, aerosol deposition (AD) is used to create dense\, fine-grain matrices into which single-crystal templates can be ripened. Grain growth studies on these and complement ary sample sets via traditional compaction and tape-cast TGG with seed platelets provide key input parameters for simulations as well as par allel model validation. A low cost optical furnace for rapid densifica tion has also been developed\; using simple broadband blackbody radiat ion\, BaTiO3\, PMN-PT can be sintered\, and many other samples in seco nds. Prof. Geoff Brennecka’\;s group also works extensively on sp uttered AlN-based thin films\, which have dominated the market of piez oelectric microelectromechanical system (MEMS) resonators for many yea rs and have recently attracted increased interest for their ferroelect ric response. Their work focuses on the roles of structurally-disrupti ve isovalent (e.g.\, Sc\, B\, La\, Gd for Al) substitutions and on nom inally donor (e.g.\, O for N\; Si\, Hf\, Zr for Al) defects in AlN. Th e large bandgap of AlN combined with non-equilibrium sputter depositio n provides a great deal of flexibility for both iso- and hetero-valent alloy / defect engineering of AlN-based films for ferroelectric and p iezoelectric applications. In fact\, films with upwa DTSTART:20260721T080000Z DTEND:20260721T100000Z LOCATION:H14 DTSTAMP:20260702T193309Z END:VEVENT END:VCALENDAR